| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device in which a first conductor and a second conductor in a trench are surely connected, and requirements for high integration and microfabrication are fulfilled, and to provide a method for manufacturing this semiconductor device. <P>SOLUTION: This semiconductor 100 is provided with a semiconductor substrate 110, a trench 135 formed on the semiconductor substrate 110, a first conductor layer 150 accumulated at the relatively lower part of the inside of the trench 135 and formed with a hollow on the upper face, a buried layer 199 formed by burying the hollow of the first conductive layer 135 and made of conductive materials whose fusing point is lower than that of the first conductive layer 135, and a second conductive layer 152 formed on the buried layer 199 inside the trench 135 and electrically connected to the first conductor layer 150. <P>COPYRIGHT: (C)2004,JPO |
