| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory and a control method for the same which are capable of holding memory of more than 2 bits per memory element even if it is scaled down, performing stable operation, and preventing malfunctions such as a rewrite fault caused by level drop of a power source voltage supplied from outside. <P>SOLUTION: The semiconductor memory is provided with a memory cell array using as a memory cell the memory device consisting of a gate electrode formed on a semiconductor layer across a gate insulating film, a channel area arranged under the gate electrode, a dispersion area arranged on both sides of the channel area and having a reverse conductivity type to the channel area, and a memory function body formed on both sides of the gate electrode and having a function to hold a charge. When a first and a second power source voltage VCC 1 and VCC 2 supplied from the outside are lower than a prescribed voltage, a rewrite command to a memory circuit 34 including the memory cell array is prohibited by a lockout circuit 33a. <P>COPYRIGHT: (C)2004,JPO</p> |
