| 摘要 |
PROBLEM TO BE SOLVED: To provide a heterojunction bipolar transistor having a structure in which the parasitic capacitance can be reduced. SOLUTION: A transistor 1a is provided with a subcollector layer 3, a collector region 5, a base layer 7, and an emitter layer 9. The subcollector layer 3 has a main surface 3a having a first region 3b and a second region 3c. The collector region 5 has a first collector 5a and a second collector 5b. The collector 5a is extended in a specified axial direction crossing the main surface 3a of the subcollector layer 3, and is provided in the first region 3b of the subcollector layer 3. The collector 5b is extended along a reference surface crossing the specified axis. The base layer 7 is provided on the first collector 5a and the collector 5b of the collector region 5. The emitter layer 9 is provided on the base layer 7. The second collector 5b is separated from the second region 3c of the subcollector layer 3. COPYRIGHT: (C)2004,JPO
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