| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method of manufacturing a substrate for a semiconductor device, a method of manufacturing a semiconductor device, and a method of cleaning an apparatus for manufacturing a semiconductor device, which readily remove residual metallic elements on a surface. SOLUTION: The method comprises steps of forming complexes of the metal existing on a surface of the semiconductor substrate 12 and cyanide ions by bringing the surface of the substrate 12 into contact with a solution 11 comprising the cyanide ions, and removing the solution 11 from the surface of the substrate 12. COPYRIGHT: (C)2004,JPO
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