JUNCTION FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To increase threshold voltage and decrease turn-on resistance in the gate forward direction in a junction gate field effect transistor. SOLUTION: On a semiconductor layer 109 wherein a recess created in a cap layer 111 is exposed on the surface, a regrown semiconductor layer 112 is formed by regrowing. A channel layer 107 is doped with a first conductivity type impurity, and the regrown semiconductor layer 112 is doped with a second conductivity type impurity. COPYRIGHT: (C)2004,JPO