| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that laser properties of a DFB laser having an InGaAlAs active layer are deteriorated especially at high temperatures due to a high resistance of elements. SOLUTION: On an InGaAlAs-MQW layer 104 formed above an n-type InP substrate 101, a p-type InGaAlAs graded index-separate confinement heterostructure (GRIN-SCH) layer 105, a p-type InAlAs electron stop layer 106, and a p-type diffraction grating layer 107 are deposited in this order. After forming a diffraction grating, a p-type InP clad layer 108 and a p-type InGaAs contact layer are regrown in this order, to complete a ridge type laser. The depth of an unevenness of the diffraction grating in the p-type diffraction grating layer 107 is smaller than the thickness of the layer 107. COPYRIGHT: (C)2004,JPO
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