发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which can realize various logic functions by a few kinds of smaller-size cells, and which can be reduced in leakage current on standby and is improved in operational characteristics by eliminating the influence of an IR drop by a power supply switch during operation. SOLUTION: The semiconductor integrated circuit is manufactured by combining a first cell S1 and a second cell S2 by a standard cell method or by a gate array method. A logic operation circuit is fabricated using the first cell S1 consisting of a plurality of transistors M01-M04 which constitute a pass transistor logic network. Using the second cell S2 consisting of a series combination of PMOS transistors M05 and a series combination of NMOS transistors M06; a driver circuit for driving the logic operation circuit, and a data storage circuit for storing the output data from the logic operation circuit, are fabricated. The second cell consists of a series combination of transistors, and the source-to-drain voltage is divided, resulting in the reduction in leakage current compared with a case with a single transistor. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179268(A) 申请公布日期 2004.06.24
申请号 JP20020341507 申请日期 2002.11.25
申请人 SHARP CORP 发明人 YONEMARU MASASHI
分类号 H01L21/822;H01L21/82;H01L21/8234;H01L27/02;H01L27/04;H01L27/088;H01L27/10;H01L27/118;H03K19/00;H03K19/173;(IPC1-7):H01L21/82;H01L21/823 主分类号 H01L21/822
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