| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory apparatus which can suppress the decrease of readout margin due to fluctuation in reference potential while reducing the area of a memory cell array. SOLUTION: The memory apparatus is provided with a ferroelectric capacitor 12 having a hysteresis characteristic and a read amplifier 7 which impresses a bias voltage to directions varying in the first time and the second time to the ferroelectric capacitor 12 in reading out data and decides the readout data by comparing the readout data of the first time and the readout data of the second time. COPYRIGHT: (C)2004,JPO
|
