| 摘要 |
A plasma etching chamber is cleaned with a supply of pressurized nitrogen or argon that is electrically heated. The cleaning cycle is performed during the idle time following an etching cycle. Electrically heated cleaning gas flows into the etching chamber for a predetermined period during which the etching chamber rises. Flow of heated cleaning gas is then stopped, and the etching chamber is evacuated by existing equipment. The cycle can be started automatically using a pressure signal from a conventional purging gas line or from a signal at a SECS/GEM port.
|
