| 摘要 |
In a method of cutting a semiconductor wafer in which the semiconductor wafer 6 is cut by plasma etching, a protective sheet 30 on which a metallic layer 30b, a plasma etching rate of which is low, is formed on one face of an insulating sheet 30a is stuck on to a circuit forming face 6a by an adhesive layer 30c, and plasma is exposed onto an opposite side to the circuit forming face 6a from a mask side which is formed by covering regions except for cutting lines 31b with a resist film 31a so as to conduct plasma etching on portions of the cutting lines. Due to the above structure, it is possible to use the metallic layer as an etching stop layer for suppressing the progress of etching. Therefore, fluctuation of the progress of etching can be avoided and heat damage caused on the protective sheet can be prevented.
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