发明名称 |
Honeycomb structure containing si and method for manufacture thereof |
摘要 |
A honeycomb structure 1 has a large number of through-holes 3 divided by partition walls 2 and extending in the axial direction, characterized in that the honeycomb structure contains a Si phase having a lattice constant controlled at 0.54302 to 0.54311 nm at room temperature. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein the precursor contains a Si phase and the firing step is conducted using a furnace material free from any boron-containing compound. A process for producing the honeycomb structure 1, includes a firing step of firing a precursor of honeycomb structure, wherein a reduction percentage of Si content in Si phase after firing step relative to Si content in Si phase before firing step is suppressed at 10% by mass or less. Having an improved thermal conductivity, the honeycomb structure is superior in thermal shock resistance. |
申请公布号 |
US2004118095(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20030474309 |
申请日期 |
2003.10.07 |
申请人 |
CHIKAWA SHUICHI;HARADA TAKASHI;OTSUKA AIKO;WADA YUKIHISA;YAMAMOTO YOSHINORI |
发明人 |
CHIKAWA SHUICHI;HARADA TAKASHI;OTSUKA AIKO;WADA YUKIHISA;YAMAMOTO YOSHINORI |
分类号 |
B01D39/20;B01D46/24;B01J21/08;B01J27/224;B01J35/04;B01J37/08;B01J37/34;C04B35/117;C04B35/185;C04B35/488;C04B35/505;C04B38/00;F01N3/022;F01N3/28;(IPC1-7):B01D46/00 |
主分类号 |
B01D39/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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