| 摘要 |
PURPOSE: A vertical structure semiconductor TFT(Thin Film Transistor) is provided to be capable of maximizing the surface area for flowing current and improving the driving speed of a device. CONSTITUTION: A vertical structure semiconductor TFT is completed by sequentially depositing the first electrode(220), a dielectric thin film(230), the second electrode(240), an organic semiconductor thin film(260), and the third electrode(250) on a substrate(210). At this time, predetermined current vertically flows between the second and third electrode. The predetermined current is controlled by the electric field generated from the first electrode, wherein the electric field parallels the predetermined current. Preferably, the substrate is one selected from a group consisting of a silicon mono-crystal, glass, or plastic substrate.
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