发明名称 METHODS FOR FORMING COPPER INTERCONNECT STRUCTURES BY CO-PLATING OF NOBLE METALS AND STRUCTURES FORMED THEREBY
摘要 A method of forming a copper interconnect, comprising forming an opening in a dielectric layer disposed on a substrate, forming a barrier layer over the opening, forming a seed layer over the metal layer, and forming a copper-noble metal alloy layer by electroplating and/or electroless deposition on the seed layer. The copper-noble metal alloy improves the electrical characteristics and reliability of the copper interconnect.
申请公布号 WO2004053202(A1) 申请公布日期 2004.06.24
申请号 WO2003US36064 申请日期 2003.11.06
申请人 INTEL CORPORATION 发明人 DUBIN, VALERY
分类号 C23C18/48;C25D3/58;C25D7/12 主分类号 C23C18/48
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