| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for forming an electric charge retaining element in a recess, wherein a manufacturing failure of the electric charge retaining element due to film thickness variations of a photosensitive resin covering a lower electrode formed in the recess. <P>SOLUTION: A silicon nitride film 401 containing free ammonium is formed in a peripheral surface of a recess 203, and hydrogen ions caused from an acid generator during exposure is trapped by ammonia oozed out from the silicon nitride film 401 to form ammonium ions, and a decomposition of the positive chemical amplification type photosensitive resin is suppressed in the recess 203. <P>COPYRIGHT: (C)2004,JPO |
