| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor dynamical quantity sensor, which make it possible to easily form a thin film located above a substrate, a specified distance removed from the substrate, into a desired shape. <P>SOLUTION: On a silicon substrate 1, a silicon oxide film 32 is prepared as a sacrifice layer. Then, a polysilicon thin film 34 is prepared on the silicon oxide film 32. After that, phosphorus(P) ions are implanted into the surface of the polysilicon thin film 34 to improve the surface of the polysilicon thin film 34. By doing this treatment, the profile of the stress distribution which exists in the thickness direction of the polysilicon thin film 34 is partly changed and thereby the stress distribution is adjusted. Then it is annealed at a temperature higher than maximum allowable working temperature of the semiconductor dynamical quantity sensor, and below sinter temperature of metal traces. <P>COPYRIGHT: (C)2004,JPO</p> |
