MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which performs non-selective etching or selective etching for a plurality of insulating films on a semiconductor substrate by using etchant of the same composition which uses neither organic acid nor organic solvent. SOLUTION: Etchant is water solution of HF which dissociates to F-and HF2-in water solution. Setting of whether selectivity (etching rate) of an SiN film to a thermal oxide SiO2film is about 1 or a large value of about 30 or more is changed by controlling concentration and temperature of the HF water solution, and the water solution is used both in non-selective etching process and selective etching process of the SiN film to the thermal oxide SiO2film. COPYRIGHT: (C)2004,JPO