| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can more suppress the deterioration of the ferroelectric layer of a capacitor than in the conventional practice, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with a silicon (semiconductor) substrate 1, a first interlayer insulating layer (first insulating layer) 10 formed above the substrate 1, and a lower electrode 12a formed on the insulating layer 10. This device is also provided with a capacitor dielectric layer 13a formed on the electrode 12a and having a side face substantially continuing to one side face of the electrode 12a, an upper electrode 14a formed on the dielectric layer 13a, and a second interlayer insulating layer (second insulating layer) 19 having a sixth contact hole (first hole) 19f through which the above-mentioned side faces of the electrode 12a and dielectric layer 13a are exposed. In addition, this device is also provided with lead-out wiring 23d for lower electrode which is formed in the contact hole 19f and electrically connected to the side face of the lower electrode 12a. COPYRIGHT: (C)2004,JPO
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