| 摘要 |
A low resistance Co silicide layer with less leakage current is formed over the surface of the source and drain of a MISFET by optimizing the film forming conditions and annealing conditions upon formation of Co (cobalt) silicide. Described specifically, low resistance source and drain (n<+ >type semiconductor regions, p<+ >type semiconductor regions) with less junction leakage current are formed by, upon formation of a Co silicide layer by heat treating a Co film deposited over the source and drain (n<+ >type semiconductor regions, p<+ >type semiconductor regions) of the MISFET, depositing the Co film at a temperature as low as 200° C. or less, carrying out heat treatment in three stages to convert the Co silicide layer from a dicobalt silicide (CO2Si) layer to a cobalt monosilicide (CoSi) layer and then to a cobalt disilicide (CoSi2) layer successively.
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