发明名称 PLASMA ETCHING APPARATUS
摘要 PURPOSE: A plasma etching apparatus is provided to carry out the periodical spin process for a quartz pipe without dissolving the vacuum state of the quartz pipe and a process chamber by using the first and second valve. CONSTITUTION: A plasma etching apparatus is provided with a process chamber, a quartz pipe(405) for guiding plasma to the process chamber, a connection pipe(420) connected with the quartz pipe through its one end portion, and the first valve(411) installed at the other end portion of the connection pipe controls the vacuum state of the quartz pipe. The plasma etching apparatus further includes a gas inlet pipe(404) connected with the connection pipe through its one end portion, the second valve(412) installed at the other end portion of the gas inlet pipe controls supply gas, and an exhaust port(413) between the first and second valve.
申请公布号 KR20040053522(A) 申请公布日期 2004.06.24
申请号 KR20020080256 申请日期 2002.12.16
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 HWANG, SANG IL;JUNG, JI HO
分类号 H01L21/3065;(IPC1-7):H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址