METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to minimize the generation of short by using a plurality of contact or via holes. CONSTITUTION: An insulating layer(102) is formed on a semiconductor substrate(101). The first interconnection(103) is formed on the insulating layer. An interlayer dielectric(104) is formed on the resultant structure. A plurality of contact holes are formed by selectively etching the interlayer dielectric. A barrier metal film(110) is formed on the contact holes. The second interconnection(111) is then formed in the contact holes.