发明名称 METHOD FOR FABRICATING FBAR DEVICE USING MEMS METHOD
摘要 PURPOSE: A method for fabricating an FBAR device using a MEMS method is provided to improve preferred orientation and preferred crystallization of a piezoelectric layer by growing directly the piezoelectric layer on a single crystalline substrate. CONSTITUTION: A piezoelectric layer is formed on an upper surface of a substrate(1). A photoresist is coated on an upper part of the piezoelectric layer. A pattern is formed on the photoresist. The patterned piezoelectric layer is etched. The photoresist is removed from the substrate. The photoresist coated on a rear surface of the substrate. The photoresist is patterned. An anisotropic etching process for the rear surface of the substrate is performed by using the pattern of the photoresist. A via hole is formed thereon. An electrode(10) is formed on the upper part and a lower part of the piezoelectric layer.
申请公布号 KR20040052851(A) 申请公布日期 2004.06.23
申请号 KR20040032852 申请日期 2004.05.10
申请人 ANTECHNOLOGY CO., LTD. 发明人 CHO, SEONG RYEOL;JANG, CHONG GYU;PARK, HUI DAE;SEO, DONG JIN;SHIN, SEONG SIK;YOO, BYEONG YEOL;YOON, HYEON MUK
分类号 H03H3/02 主分类号 H03H3/02
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