| 摘要 |
<p>There is provided a photoresist composition capable of forming a resist pattern with minimal LER, and a method of forming a resist pattern. This method is a method of producing a (meth)acrylic acid derivative polymer for use as a resist by radical polymerization of a monomer mixture comprising (a1) a (meth)acrylate ester with an acid dissociable, dissolution inhibiting group, and (a2) a (meth)acrylate ester with a lactone unit, wherein (a1) and (a2) utilize compounds such that when each compound (a1) and (a2) is individually subjected to homopolymerization, under identical conditions to the radical polymerization, and a residual monomer ratio is determined 10 minutes after the start of the homopolymerization, the difference between the minimum residual monomer ratio and the maximum residual monomer ratio is no more than 15 mol %.</p> |
