| 摘要 |
A high frequency oscillator for an integrated semiconductor circuit is a component of the semiconductor circuit, which is comprised of a first silicon layer, an adjoining silicon dioxide layer (insulation layer), and an additional subsequent silicon layer (structured layer), (SOI wafer), wherein the high frequency oscillator is comprised of a resonator with a metallized cylinder made of silicon disposed in the structured layer and a coupling disk that overlaps the cylinder in the vicinity of the layer, and an IMPATT diode that is connected to the cylinder of the resonator via a recess in the coupling disk.
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