METHOD FOR FORMING ISOLATION LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to effectively remove gate residues by preventing moat at the interface between an active and isolation region. CONSTITUTION: A pad oxide and a nitride pattern are formed on a semiconductor substrate(20). A trench is formed by etching the exposed substrate. A wall oxide layer(23) is formed on the trench. A liner nitride layer(24) is formed on the resultant structure. The trench is filled with An isolation layer(25). The pad nitride pattern and the liner nitride layer are selectively removed. Then, a polysilicon layer as a passivation layer is formed on the resultant structure.