| 摘要 |
Method of manufacturing a semiconductor device, including a first baseline technology electronic circuit ( 1 ) and a second option technology electronic circuit ( 2 ) as functional parts of a system-on-chip, by: manufacturing the first electronic circuit ( 1 ) with a first conductive layer ( 6; 6 ) that is patterned by subjecting an exposed layer portion thereof to Reactive Ion Etching (RIE); manufacturing the second electronic circuit ( 2 ) with a second conductive layer ( 6; 8 ) that is patterned by subjecting an exposed layer portion thereof to RIE; providing a tile structure ( 25; 26 ); providing the tile structure ( 25; 26 ) with at least one dummy conductive layer ( 6; 8 ) produced in the same processing step as the second conductive layer ( 6; 8 ); and exposing the dummy conductive layer ( 6; 8 ), at least partially, to obtain an exposed dummy layer portion, and RIE-etching of that exposed portion too when the second ( 6; 8 ) conductive layer is subjected to RIE.
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