发明名称 RADIATION PROTECTION IN INTEGRATED CIRCUITS
摘要 Reduced radiation damage to an IC feature is disclosed. At least a portion of the feature which is sensitive to radiation is covered by a radiation protection layer. The radiation protection layer protects the feature from being damaged to radiation during, for example, processing of the IC. In one embodiment, the radiation protection layer comprises a noble metal, oxides, alloys, or compounds thereof.
申请公布号 AU2003294742(A1) 申请公布日期 2004.06.23
申请号 AU20030294742 申请日期 2003.11.28
申请人 INFINEON TECHNOLOGIES AG 发明人 UWE WELLHAUSEN;NICOLAS NAGEL;RAINER BRUCHHAUS;STEFAN GERNHARDT
分类号 G06F1/04;H01L21/02;H01L23/00;H01L23/552;H01L27/115;H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119;(IPC1-7):H01L23/00 主分类号 G06F1/04
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