| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURE THEREOF |
| 摘要 |
A zirconium silicate layer 103 is formed on a silicon substrate 100, a zirconium oxide layer 102 is also formed on the zirconium silicate layer 103, and the zirconium oxide layer 102 is then removed, thereby forming a gate insulating film 104 made of the zirconium silicate layer 103. <IMAGE> |
| 申请公布号 |
EP1300887(A4) |
申请公布日期 |
2004.06.23 |
| 申请号 |
EP20020712286 |
申请日期 |
2002.02.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
MORIWAKI, MASARU;NIWA, MASAAKI;KUBOTA, MASAFUMI |
| 分类号 |
H01L21/28;H01L21/8234;H01L21/8242;H01L29/51 |
主分类号 |
H01L21/28 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
