| 摘要 |
Disclosed is an optical semiconductor device in which a lens of high NA and short WD in conformity with the increasing demand for high efficiency can be mounted to cope with the increase in the speed in optical communication. An optical semiconductor device includes a silicon substrate 15 having on an upper surface portion 15a a V-shaped first groove portion 15b formed by etching, a limit emitting element 11 having an optical axis in the direction of the first groove portion 15b and mounted to the upper surface portion 15a, and an aspheric lens 23 mounted in the first groove portion 15b, wherein the first groove portion 15b is composed of first and second opposing inclined surfaces 15e and 15f and a third inclined surface 15g perpendicular to the first and second inclined surfaces 15e and 15f, wherein there is formed in the silicon substrate 15 a slit 15k extending in a direction perpendicular to the direction of the first groove portion 15b and formed by cutting so as to include the first through third inclined surfaces 15e through 15g, and wherein the aspheric lens 23 is mounted to the first and second inclined surfaces 15e and 15f, with a part thereof protruding in the slit 15k, the light emitting element 11 being capable of optical communication through the aspheric lens 23. <IMAGE> |
