发明名称 |
Method and apparatus for the thermal treatment of substrates |
摘要 |
The invention relates to a device and a method for the heat treatment of substrates, especially semiconductor wafers. The device comprises a reaction chamber with a compensation element. According to the invention the substrate can be inserted and withdrawn again more easily by the fact that the compensation element (15) can be at least partly lowered and/or raised in the reaction chamber.
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申请公布号 |
US6752625(B1) |
申请公布日期 |
2004.06.22 |
申请号 |
US20000700577 |
申请日期 |
2000.11.13 |
申请人 |
STEAG RTP SYSTEMS GMBH |
发明人 |
ASCHNER HELMUT;SCHMID PATRICK;ZERNICKEL DIETER |
分类号 |
H01L21/26;H01L21/00;(IPC1-7):F27D5/00 |
主分类号 |
H01L21/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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