发明名称 |
Pixel structure for an active matrix OLED |
摘要 |
A pixel structure for an active matrix OLED. A first switching transistor has a control terminal coupled to a first scan line, and a first terminal coupled to a data line. A first P-type transistor has a drain and a gate coupled to each other, and a source coupled to a voltage source. The drain is also coupled to a second terminal of the first switching transistor. A second P-type transistor has a source coupled to the voltage source, and a second switching transistor has two terminals coupled between gates of the first and second P-type transistors, and a control terminal coupled to a second scan line. A storage capacitor is coupled between the voltage source and the gate of the second P-type transistor. An OLED has an anode coupled to the drain of the second P-type transistor and a cathode coupled to ground.
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申请公布号 |
US6753655(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020330247 |
申请日期 |
2002.12.30 |
申请人 |
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE |
发明人 |
SHIH JUN-REN;CHEN SHANG-LI;CHEN CHIEN-RU |
分类号 |
H01L51/50;G09G3/20;G09G3/30;G09G3/32;H01L29/786;(IPC1-7):G09G3/10 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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