发明名称 Pixel structure for an active matrix OLED
摘要 A pixel structure for an active matrix OLED. A first switching transistor has a control terminal coupled to a first scan line, and a first terminal coupled to a data line. A first P-type transistor has a drain and a gate coupled to each other, and a source coupled to a voltage source. The drain is also coupled to a second terminal of the first switching transistor. A second P-type transistor has a source coupled to the voltage source, and a second switching transistor has two terminals coupled between gates of the first and second P-type transistors, and a control terminal coupled to a second scan line. A storage capacitor is coupled between the voltage source and the gate of the second P-type transistor. An OLED has an anode coupled to the drain of the second P-type transistor and a cathode coupled to ground.
申请公布号 US6753655(B2) 申请公布日期 2004.06.22
申请号 US20020330247 申请日期 2002.12.30
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 SHIH JUN-REN;CHEN SHANG-LI;CHEN CHIEN-RU
分类号 H01L51/50;G09G3/20;G09G3/30;G09G3/32;H01L29/786;(IPC1-7):G09G3/10 主分类号 H01L51/50
代理机构 代理人
主权项
地址