GIANT MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SMALL LEAKAGE CURRENT, MAGNETO-RESISTIVE EFFECTIVE TYPE HEAD HAVING SMALL-LEAKAGE CURRENT, THIN-FILM MAGNETIC MEMORY HAVING SMALL LEAKAGE CURRENT AND THIN-FILM MAGNETIC SENSOR HAVING SMALL LEAKAGE CURRENT

摘要

A giant magneto-resistive effect element includes a laminated layer film having a ferromagnetic film, a non-magnetic film and an anti-ferromagnetic film. A current is caused to flow in the direction perpendicular to the film plane of the laminated layer film by upper and lower electrodes. Hard magnetic films are directly connected to both sides in the width direction of the laminated layer film. Insulating films are formed above or under the hard magnetic films. A current path between the upper electrodes or the lower electrodes and the laminated layer film is restricted by an opening defined between the insulating layers at both sides. The hard magnetic films have a specific resistance substantially the same as or larger than that of the laminated layer film. Further, there are provided a magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor including the above-mentioned giant magneto-resistive effect element.