发明名称 |
Cross point memory array using multiple thin films |
摘要 |
Cross point memory array using multiple thin films. The invention is a cross point memory array that uses conductive array lines and multiple thin films as a memory plug. The thin films of the memory plug include a memory element and a non-ohmic device. The memory element switches between resistive states upon application of voltage pulses and the non-ohmic device imparts a relatively high resistance to the memory plug upon application of low magnitude voltages.
|
申请公布号 |
US6753561(B1) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020330512 |
申请日期 |
2002.12.26 |
申请人 |
UNITY SEMICONDUCTOR CORPORATION |
发明人 |
RINERSON DARRELL;LONGCOR STEVEN W.;WARD EDMOND R.;HSIA STEVE KUO-REN;KINNEY WAYNE;CHEVALLIER CHRISTOPHE J. |
分类号 |
G11C11/56;G11C13/00;H01L27/24;(IPC1-7):H01L31/062 |
主分类号 |
G11C11/56 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|