发明名称 |
Norbornene-based copolymer for photoresist, preparation method thereof, and photoresist composition comprising the same |
摘要 |
Disclosed is an norbornene-based copolymer for photoresist, a preparation method thereof, and a photoresist composition comprising the same. The copolymer of the present invention exhibits high transparency to light of 193 nm wavelength and an excellent etching resistance, excellent resolution due to the remarkable difference between light-exposed part and light-unexposed part in the dissolving rate and excellent adhesion to the substrate due to very hydrophilic diketone group of its own. As a result, the copolymer of the present invention is very useful as ArF exposure photoresist material in the fabrication of semiconductor devices.
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申请公布号 |
US6753127(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020246474 |
申请日期 |
2002.09.19 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HAN EUN SIL;MOON BONG SEOK;SHIN JUNG HAN;HAN OUCK |
分类号 |
G03F7/027;C07B61/00;C07C45/45;C07C49/255;C07C49/553;C07C49/577;C07D317/26;C07D319/06;C08F32/08;G03F7/039;(IPC1-7):G03F7/038;C08F4/06;C07C49/105 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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