发明名称 |
Method for low k dielectric deposition |
摘要 |
The present disclosure provides a method for forming an intermediate trench layer through low k dielectric material deposition in a damascene process for manufacturing semiconductor devices. After depositing a low k dielectric material block, a curing process is applied to the low k dielectric material block for a predetermined curing time period, wherein after the curing time period, the low k dielectric material block forms a first and second low k dielectric layers so as to make the first low k dielectric layer an intermediate trench layer, thereby eliminating the need of an etch stop layer.
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申请公布号 |
US6753269(B1) |
申请公布日期 |
2004.06.22 |
申请号 |
US20030434029 |
申请日期 |
2003.05.08 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
LI LIH-PING;LU YUNG-CHEN;JANG SYUN-MING |
分类号 |
H01L21/3105;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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