发明名称 |
Semiconductor rectifier |
摘要 |
A semiconductor rectifier includes an intermediate semiconductor region (29) extending between anode (9) and cathode (7) contacts. A trenched gate (19) with insulated sidewalls (15) and base (17) can deplete the intermediate region. However, a shield region (23) acts to shield the intermediate region (29) from the gate (19) to allow current to flow in dependence on the polarity of the voltage applied between anode and cathode contacts (9, 7).
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申请公布号 |
US6753588(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020208920 |
申请日期 |
2002.07.31 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
HUANG EDDIE;PEAKE STEVEN T. |
分类号 |
H01L29/423;H01L29/47;H01L29/49;H01L29/78;H01L29/872;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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