| 发明名称 |
Semiconductor photo detecting device and its manufacturing method |
| 摘要 |
A high response speed semiconductor photo detecting device having a thin photo absorption layer which avoids an optical efficiency loss. The semiconductor photo detecting devices are formed on a semiconductor substrate having an inclined cleavage face to a principal plane of the substrate. An incoming photo signal is input to the cleavage face perpendicularly.
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| 申请公布号 |
US6753587(B2) |
申请公布日期 |
2004.06.22 |
| 申请号 |
US20010026451 |
申请日期 |
2001.12.27 |
| 申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
FURUYA AKIRA;SHIRAI TATSUNORI |
| 分类号 |
H01L31/10;H01L31/00;H01L31/0352;H01L31/105;(IPC1-7):H01L31/105 |
主分类号 |
H01L31/10 |
| 代理机构 |
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