| 摘要 |
The present invention provides a semiconductor device production method that eliminates the risk of the occurrence of residual resist in the production process, and as a result, allows the electrical characteristics and reliability of the device to be improved. In this semiconductor device production method comprising steps of: subsequently laminating a first resist layer and a second resist layer having desired patterns on a semiconductor substrate, forming a first conductive region on the semiconductor substrate by injecting a first ion into the semiconductor substrate using the first and second resist layers as masks, removing the second resist layer, forming a second conductive region on the semiconductor substrate by injecting a second ion into the semiconductor substrate using the remaining first resist layer as a mask, and removing the first resist layer.
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