发明名称 |
Memory device and method of making |
摘要 |
A non-volatile memory device includes insulators between floating gates. The insulators each include both a lower trench-fill insulator portion in a trench in the substrate, and an upper protruding portion that protrudes from the substrate. Floating gates extend between the protruding portions of adjacent insulators, and are in contact with the protruding portions of the adjacent insulators. An interpoly dielectric overlies the floating gates, and a control gate overlies the interpoly dielectric. The insulators and the floating gates may make a substantially planar surface for the interpoly dielectric, which may themselves be planar.
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申请公布号 |
US6753570(B1) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020223920 |
申请日期 |
2002.08.20 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
TRIPSAS NICHOLAS H.;CHANG KUO-TUNG;RAMSBEY MARK T. |
分类号 |
H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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