发明名称 |
Methods for fabricating semiconductor devices having capacitors |
摘要 |
Methods for fabricating semiconductor devices having capacitors are provided. A plurality of storage node electrodes are formed on a semiconductor substrate. Then, a capacitor dielectric layer is formed over the storage node electrodes. A plate electrode layer is subsequently formed on the capacitor dielectric layer. A hard mask layer is then formed on the resultant structure where the plate electrode layer is formed so as to fill a gap between the adjacent storage node electrodes. The hard mask layer and the plate electrode layer are successively patterned to form a plate electrode.
|
申请公布号 |
US6753221(B2) |
申请公布日期 |
2004.06.22 |
申请号 |
US20020322274 |
申请日期 |
2002.12.17 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON JEONG-SIC;KANG CHANG-JIN;SON SEUNG-YOUNG;KIM JIN-HONG |
分类号 |
H01L27/108;H01L21/02;H01L21/311;H01L21/3213;H01L21/8242;(IPC1-7):H01L21/824 |
主分类号 |
H01L27/108 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|