METHOD OF MANUFACTURING SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE FOR OBTAIN SOURCE AND DRAIN WITH LOW RESISTANCE AND LOW LEAKAGE CURRENT

摘要

PURPOSE: A method of manufacturing a semiconductor IC(Integrated Circuit) device is provided to obtain a source and drain with low resistance and low leakage current by forming a cobaltdisilicide(CoSi2) layer on the source and drain using Co-depositing under predetermined conditions and three-step annealing. CONSTITUTION: A Co film is deposited on a silicon substrate(1). A silicide layer(15) is formed between the substrate and the Co film by using annealing. The deposition of the Co film is performed at the temperature of 200 or less °C. The annealing is divided into the first annealing for forming a dicobaltsilicide(Co2Si) layer between the substrate and the Co film, the second annealing for transforming the dicobaltsilicide layer into a cobaltmonosilicide(CoSi) layer, and the third annealing for transforming the cobaltmonosilicide layer into a cobaltdisilicide layer.