发明名称 |
Growth-selective structure of light-emitting diode |
摘要 |
A growth-selective structure of LED is created by growing first and patterning an oxidation layer on a substrate, then applying a lateral-growth technology to form a buffer layer on the oxidation layer selectively, and an n-GaN layer, an active layer, and a p-GaN layer on the buffer layer one after another.
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申请公布号 |
US6753552(B1) |
申请公布日期 |
2004.06.22 |
申请号 |
US20030633030 |
申请日期 |
2003.08.02 |
申请人 |
FORMOSA EPITAXY INCORPORATION |
发明人 |
LAN WEN-HOW;CHEN LUNG-CHIEN;CHIEN FEN-REN |
分类号 |
H01L21/20;H01L33/00;(IPC1-7):H01L27/15 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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