| 摘要 |
A pad conditioner for semiconductor substrates for performing conditioning by slide contact with the abrasive surface of the polishing pad comprises a support member having a surface opposed to the polishing pad, a joining alloy layer covering the above surface of the support member, and a group of hard abrasive grains which are spread out and embedded in the joining alloy layer and supported by the joining alloy layer. At the contact interface between each of the hard abrasive grains and the above joining alloy, the surfaces of the hard abrasive grains are covered with either a layer of metallic carbides or a layer of metallic nitrides. Ag-base and Ag-Cu-base alloys, etc., can be used as the joining alloys.
|
