发明名称 METHOD OF THERMOMAGNETIC MEASUREMENTS UNDER PRESSURE
摘要 FIELD: study of thermomagnetic effects at super-high pressures. ^ SUBSTANCE: proposed method includes securing semiconductor specimen with combined longitudinal and transversal contacts between two plates in high-pressure chamber placed in magnetic field. Temperature gradient is created in specimen and pressure is exerted on specimen. Chamber is turned in magnetic field around its axis and positions corresponding to even and odd thermoelectric signals relative to magnetic field are found; then, longitudinal and transversal thermomagnetic effected are measured in these positions. Nernst-Ettingshausen effect is measured as thermomagnetic effect. Axis of chamber along which temperature gradient is created is positioned perpendicularly relative to magnetic field. Plates are made in form of anvils manufactured from synthetic diamond. Contacts are hold-down in construction. Measurements are performed in non-stationary mode. Positions corresponding to even and odd thermoelectric signals relative to magnetic field are found by performing measurements in different positions of chamber at change of magnetic induction. ^ EFFECT: enhanced efficiency of measurements at pressure up to 30 hPa. ^ 6 cl, 6 dwg
申请公布号 RU2231047(C2) 申请公布日期 2004.06.20
申请号 RU20020114014 申请日期 2002.05.29
申请人 发明人 SHCHENNIKOV V.V.;OVSJANNIKOV S.V.
分类号 G01N25/00;G01N25/32;H01L37/00 主分类号 G01N25/00
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