| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to prevent a damage to an LDD(lightly doped drain) ion implantation process or a source/drain ion implantation process by depositing a nitride thin film after a thermal oxide process for recovering gate etch damage is performed. CONSTITUTION: A semiconductor substrate(21) including an isolation layer and a well is prepared. A gate electrode is formed on the substrate. A thermal oxide process is performed on the resultant structure to grow a thermal oxide layer(25) of a thin film on the gate electrode and the substrate. A nitride layer is deposited on the thermal oxide layer. An LDD process and a halo ion implantation process are sequentially performed by using the nitride layer as a buffer layer so as to form an LDD region(28) and a halo region(29) on the substrate at both sides of the gate electrode. A spacer is formed on both sidewalls of the gate electrode. A source/drain ion implantation process using the nitride layer as a buffer layer again is performed to form a source/drain region(32) on the substrate at both sides of the gate electrode including the spacer. An insulation layer is deposited on the resultant structure. The insulation layer and the nitride layer under the insulation layer are etched to form a silicide blocking pattern(33) exposing the surface of the gate electrode and the surface of the source/drain region. A silicide layer(34) is formed on the exposed gate electrode and the source/drain region.
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