| 摘要 |
PURPOSE: An RF(radio frequency) power matching unit is provided to remarkably reduce fabricating cost by preventing a bypass device from being damaged by reflect power and by minimizing a problem of a process chamber caused by an unstable supply of RF power when an RF matching mechanism is optimized. CONSTITUTION: A semiconductor wafer is processed in an arbitrary process chamber(1) by using plasma. An RF power generator(21) generates and supplies RF power for inducing formation of the plasma in the process chamber. An RF matching box(22,23) electrically intermediates between the process chamber and the RF power generator. The RF matching box controls the intensity of the RF power according to the variation of the impedance inside the process chamber so as to match the impedance of the RF power and the impedance of process chamber. A single bypass device(24) intermediates between the Rf matching box and the process chamber while electrically connected in serial connected to the Rf power generator and bypasses the RF power whose intensity is controlled by the RF matching box to the process chamber. The self-processed capacity of the single bypass device is fixed as high capacity so that the electric voltage-resistant capacity increases substantially.
|
