| 摘要 |
PURPOSE: A capacitor of a semiconductor device is provided to guarantee capacitance of a capacitor by preventing a storage node from falling or slanting and by increasing the height of the storage node. CONSTITUTION: An etch stop layer(26), the first mod insulation layer, a storage node supporting layer and the second mold insulation layer are sequentially formed on an insulation layer with a contact. A pattern for forming the storage node(34) is formed on the resultant structure. A photolithography process is performed on the second mold insulation layer, the storage node supporting layer, the first mold insulation layer and the etch stop layer by using the pattern as a mask to form a storage node hole. The storage node hole is filled with a conductive material to form the storage node. The first mold insulation layer on the resultant structure is removed. A photolithography process is performed on the storage node supporting layer exposed by the removal of the first mold insulation layer to form a storage node supporting unit(30a) for supporting a predetermined position of the storage node. The first mold insulation layer formed under the storage node supporting unit is eliminated.
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