CRYSTALLIZATION METHOD OF AMORPHOUS SILICON AND METHOD FOR FORMING THIN FILM TRANSISTOR USING THE SAME

摘要

PURPOSE: A crystallization method of amorphous silicon and a method for forming a TFT(Thin Film Transistor) using the same are provided to prevent the decrease of a process window and obtain a large grain by using the first and second light source. CONSTITUTION: A buffer layer(32) and an amorphous silicon layer are sequentially formed on an insulation substrate(31). A pre-heating process is carried out on the amorphous silicon layer by irradiating the first light source. The amorphous silicon layer is transformed into a polycrystalline silicon layer(34) by irradiating the second light source to the amorphous silicon layer. Preferably, a mono-chromic or multi-chromic light source such as ultraviolet ray, infrared ray, and laser beam are used as the first light source. Preferably, excimer laser such as XeCl is used as the second light source.