发明名称 |
ETCHING SOLUTION CAPABLE OF REMOVING MOLYBDENUM DEBRIS FROM COPPER MOLYBDENUM LAYER AND ETCHING METHOD THEREOF |
摘要 |
PURPOSE: An etching solution capable of removing molybdenum debris from a copper molybdenum layer and an etching method thereof are provided to easily control etching rate, improve tape profile, enhance the linearity of a pattern, constantly conserve the same etching characteristics, and increase the maintenance time of the etching solution. CONSTITUTION: An etching solution of a copper molybdenum layer contains a hydrogen peroxide solution of 5-30 weight%, organic acid of 0.5-5 weight%, and phosphate salt of 0.2-5 weight%. The etching solution further includes the first addictive of 0.2-5 weight%, the second addictive of 0.2-5 weight%, a fluorine compound of 0.01-1.0 weight% and deionized water.
|
申请公布号 |
KR20040051502(A) |
申请公布日期 |
2004.06.18 |
申请号 |
KR20030082375 |
申请日期 |
2003.11.19 |
申请人 |
DONGWOO FINE-CHEM CO., LTD.;LG.PHILIPS LCD CO., LTD. |
发明人 |
CHAE, GI SEONG;CHO, GYU CHEOL;CHOI, YONG SEOK;HWANG, YONG SEOP;KIM, SEONG SU;KWON, O NAM;LEE, GYEONG MUK;LEE, SEUNG YONG |
分类号 |
H01L21/306;B44C1/22;C23F1/18;C23F1/26;C23F1/30;G02F1/1365;H01L21/308;H01L21/3213;H01L21/336;H01L29/786;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|