发明名称 ETCHING SOLUTION CAPABLE OF REMOVING MOLYBDENUM DEBRIS FROM COPPER MOLYBDENUM LAYER AND ETCHING METHOD THEREOF
摘要 PURPOSE: An etching solution capable of removing molybdenum debris from a copper molybdenum layer and an etching method thereof are provided to easily control etching rate, improve tape profile, enhance the linearity of a pattern, constantly conserve the same etching characteristics, and increase the maintenance time of the etching solution. CONSTITUTION: An etching solution of a copper molybdenum layer contains a hydrogen peroxide solution of 5-30 weight%, organic acid of 0.5-5 weight%, and phosphate salt of 0.2-5 weight%. The etching solution further includes the first addictive of 0.2-5 weight%, the second addictive of 0.2-5 weight%, a fluorine compound of 0.01-1.0 weight% and deionized water.
申请公布号 KR20040051502(A) 申请公布日期 2004.06.18
申请号 KR20030082375 申请日期 2003.11.19
申请人 DONGWOO FINE-CHEM CO., LTD.;LG.PHILIPS LCD CO., LTD. 发明人 CHAE, GI SEONG;CHO, GYU CHEOL;CHOI, YONG SEOK;HWANG, YONG SEOP;KIM, SEONG SU;KWON, O NAM;LEE, GYEONG MUK;LEE, SEUNG YONG
分类号 H01L21/306;B44C1/22;C23F1/18;C23F1/26;C23F1/30;G02F1/1365;H01L21/308;H01L21/3213;H01L21/336;H01L29/786;(IPC1-7):H01L21/306 主分类号 H01L21/306
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