METHOD FOR FORMING STORAGE NODE CONTACT OF SEMICONDUCTOR DEVICE WITH CAPACITOR OVER BIT LINE STRUCTURE

摘要

PURPOSE: A method for forming a storage node contact of a semiconductor device with a capacitor over bit line structure is provided to be capable of minimizing bit line capacitance and preventing voids from being generated at an interlayer dielectric. CONSTITUTION: Bit lines(40) having a line and space type structure are arrayed on a substrate. A hard mask is deposited on each bit line. An interlayer dielectric is formed on the resultant structure for filling the gaps between bit lines. A hard mask layer for storage node contact hole formation is formed on the interlayer dielectric. A photoresist pattern is formed on the hard mask layer. A hard mask(70-M) is formed by selectively etching the hard mask layer using the photoresist pattern as an etching mask. A spacer(90-S) for storage node contact hole formation is formed at both sidewalls of the hard mask of the bit line. Storage node contact holes are formed by selectively etching the interlayer dielectric. A conductive layer is formed on the resultant structure for filling the storage node contact holes. A storage node contact is formed by planarizing the conductive layer and removing the hard mask.