FLASH MEMORY DEVICE HAVING COLUMN PRE-DECODER CAPABLE OF SELECTING OVERALL COLUMN SELECT TRANSISTORS AND STRESS TESTING METHOD THEREOF

摘要

PURPOSE: A flash memory device having a column pre-decoder capable of selecting overall column select transistors and a stress testing method thereof are provided to reduce stress testing time by selecting overall column select transistors and applying a high-voltage to each gate of the transistors to perform a stress testing. CONSTITUTION: A buffer(610) inputs an overall column select signal(AllColSel). Decoders (620,630) decode an output of the buffer(610) and column addresses(ColAdd(0),ColAdd(1),ColAdd(2),ColAdd(3)). Level shifters(202,204,206,208,212,214,216,218) vary a voltage level of each of column select signals(ColSel1(0),ColSel1(1),ColSel1(2),ColSel1(3),ColSel2(0),ColSel2(1),ColSel2(2),ColSel2(3)) connected to gates of column select transistors in response to outputs of the decoders(620,630). The column select signals(ColSel1(0),ColSel1(1),ColSel1(2),ColSel1(3),ColSel2(0),ColSel2(1),ColSel2(2),ColSel2(3)) are applied in a high-voltage in response to the overall column select signal(AllColSel) upon a stress testing.